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NUSOD2021_MM02

MM02–Efficient multi-band k·p calculations of superlattice electronic and optical properties using plane waves

Murphy C., O’Reilly E. P., Broderick C. A.

Solving the multi-band k·p Schrodinger equation for a quantum-confined heterostructure using a reciprocal space plane wave approach presents several advantages compared to conventional real space approaches such as the finite difference or element methods. In addition to allowing analytical derivation of the heterostructure Hamiltonian, a desired level of accuracy in the computed eigenstates can generally […]
202
16
NUSOD2021_N04

N04–Bismuth-containing GaAs core-shell nanowires

Usman Muhammad

This work theoretically investigates the electronic and optical properties of GaBixAs1–x/GaAs core–shell and GaAs/GaBixAs1–x/GaAs multi-core–shell nanowires. Our results show a large tuning of absorption wavelength (0.9 µ to 1.6 µ) by varying Bi composition and/or nanowire diameters. The computed polarisation dependent optical spectra indicate the possibility to incorporate such nanowires in photonic devices desiring isotropic […]
83
7
NUSOD2021_LD10

LD10–Optical Feedback Regimes Suitable for Distance Measurement with a Ring Laser

Lombardi L., Annovazzi-Lodi V., Aromataris G., Scirè A.

We numerically study the behavior of a ring laser subject to bidirectional delayed optical feedback, when the isolated laser is in the quasi-unidirectional regime. We find different regimes, two of which are of special interest, because the laser switching period, between the clockwise and the counter-clockwise mode, is linearly related to the time of flight […]
97
2
NUSOD2021_D06

D06–Photoresponse uniformity in planar InP/InGaAs avalanche photodiodes

Walker A. W., Pitts O. J.

 Numerical simulation of the electric field distribution and photocurrent response of a planar InP/InGaAs avalanche photodiode is presented as a function of varying multiplication width. The Zn dopant diffusion front is obtained by numerically simulating the diffusion process. The simulation results indicate that while a local peak value of the electric field is observed near […]
121
7
NUSOD2021_IS02

IS02–Numerical Simulation of Optical Through-Silicon Waveguide for 3D Photonic Interconnections

Villasmunta F., Steglich P., Schrader S., Schenk H., Mai A.

Optical interconnections are a promising step forward to overcome the intrinsic limitations of electrical interconnections in integrated circuits. In this work, we present a finite element method (FEM) simulation study of a dielectric waveguide etched through the full thickness of a silicon substrate. In particular, it is investigated the effect of the bridge-to-core size ratio […]
126
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NUSOD2021_P01
P01–Design of a computer-generated waveguide hologram for integrated free space sensing

P01–Design of a computer-generated waveguide hologram for integrated free space sensing

Liu T., Jiao Y., Bente E.

In this work we present a design of a computer generated waveguide hologram coupler with an ultra-long working distance and wavelength multiplexing in the near infrared. An approximation method to compute the scalar field from a detour phase hologram is presented. The accuracy is comparable to FDTD but it is achieved much faster. Coupling efficiency […]
151
6
NUSOD2021_LED04
LED04–Marked efficiency enhancement of 222 nm AlGaN-based deep-UV LEDs for disinfection of SARS-2 (Covid-19)

LED04–Marked efficiency enhancement of 222 nm AlGaN-based deep-UV LEDs for disinfection of SARS-2 (Covid-19)

Jamil T., Usman Muhammad, Jamal H., Khan S.

The AlGaN-based deep ultraviolet light emitting diodes (DUV LEDs) for the disinfection of SARS-2 (Covid-19) are proposed in this study. The optoelectronic characteristics of DUV LEDs are numerically analyzed. The results show that the internal quantum efficiency (IQE) and radiative recombination rate are excellently improved in the proposed LED. This significant enhancement is due to […]
104
8
NUSOD2021_MM03

MM03–Parameter Estimation of an Ion-Exchange Process Based on a Pseudo Probability Measure

Roth J. P., Kühler T., Griese E.

For the realization of integrated optical waveguide components, needed for integrated photonic circuits, a promising approach to manufacturing is their embedding in thin glass sheets by thermal diffusion processes. Because prototyping or manufacturing small batch series is costly, appropriate numerical simulations are used in order to allow an accurate characterization. However, in practical applications it […]
72
2
NUSOD2021_N05

N05–Modeling the effects of p-modulation doping in InAs quantum dot devices

Maglio B., Jarvis L., Tang M., Liu H., Smowton P. M.

A modeling routine has been developed to quantify the effects of p-modulation doping in the waveguide core region of InAs quantum dot (QD) devices. Utilizing one dimensional approximations, simulated outputs of reverse and forward devices are simulated providing insight into absorption and gain properties.
91
5
NUSOD2021_D07

D07–The absorption enhancement effect of metal gratings integrated Silicon-based Blocked-Impurity-Band (BIB) terahertz detector

Chen Yulu, Tong W., Wang B., Wang L., Cui H., Wang X.

High-sensitivity Terahertz (THz) detection technology is widely researched for its potential applications in astronomical observation, human security check, weak signal biomacromolecule detection, etc. In this work, a novel THz detector based on metal gratings/Si-BIB hybrid structure is theoretically simulated and successfully fabricated. From FDTD simulation results, the optical field is localized in the absorbing-layer region […]
81
1
NUSOD2021_IS03

IS03–Simulation and design of plasmonic directional couplers: application to interference-based all-optical gates

Ghomashi M., Tibaldi A., Bertazzi F., Vallone M., Goano M., Ghione G.

The paper is focused on the design of optical components based on plasmonic multi-slot directional couplers. In particular, the design of an all-optical gate is proposed, whose operation is based on the coupling between three plasmonic slots. The device input wavelength is 1550 nm, typical of long-haul telecommunication systems. The device footprint is as small […]
104
6
NUSOD2021_NM01
NM01–Machine Learning & multiscale simulations: toward fast screening of organic semiconductor materials

NM01–Machine Learning & multiscale simulations: toward fast screening of organic semiconductor materials

Rinderle M., Gagliardi A.

Organic semiconductor devices promise cost-efficient processability at low temperatures, but the usually amorphous materials suffer from low charge carrier mobility. The search for high mobility organic semiconductor materials has thrived data science and Machine Learning approaches to screen the vast amount of possible organic materials. We present a multiscale simulation model based on machine learned […]
195
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NUSOD2021_LED05
LED05–Engineering the Active Region to Enhance the IQE by ~8% in AlGaN/GaN based UVC LED

LED05–Engineering the Active Region to Enhance the IQE by ~8% in AlGaN/GaN based UVC LED

Acharya J., Venkateshh S., Ghosh K.

To increase the internal quantum efficiency (IQE) of AlGaN/GaN based multi quantum-well (MQW) UV-C LED, the aluminium composition of barriers and wells in the active region has been engineered. Increase in electron-hole overlap and hence the radiative recombination rate in the final engineered structure has enabled to enhance the IQE by 8%.
112
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NUSOD2021_MM04

MM04–Mirror particle effects in kinetic Monte Carlo simulations including Coulomb interaction with periodic boundary conditions

Schwuchow M., Wagner C., Thränhardt A.

We investigate the photoluminescence of low-dimensional disordered materials, as used e.g. in solar cells, by performing kinetic Monte-Carlo simulations of exciton hopping with periodic boundary conditions. In order to perform numerically efficient calculations, the box length Lbox should be as small as possible while maintaining physically meaningful results during the presence of exciton-exciton-interaction. Exciton-exciton interaction […]
82
3
NUSOD2021_N06

N06–Optical properties of a waveguide-fed plasmonic nano-array through approximated scattering theory

Alam B., Ferraro A., d’Alessandro A., Caputo R., Asquini R.

We analyze the optical scattering properties of an array of Au nano-cylinders fabricated upon an ion-exchanged waveguide. The integrated systems is considered for fluoroscopy and Raman spectroscopy. Absorption, scattering and extinction have been calculated through a combination of Finite Difference Time Domain (FDTD) method and scattering theory. While a portion of the excitation signal interacts […]
81
2
NUSOD2021_LD13pd
LD13pd–Numerical Modeling and Experimental Validation of Tm- and Er-Doped Tellurite Microsphere Lasers

LD13pd–Numerical Modeling and Experimental Validation of Tm- and Er-Doped Tellurite Microsphere Lasers

Anashkina E. A., Andrianov A. V.

We report an efficient semi-analytical method for modeling of CW rare-earth ion-doped microlasers. We numerically simulated threshold pump powers and expected laser wavelengths for in-band pumped Tm- and Er-doped tellurite glass microspheres. With the increase of Q-factor, the laser wavelength grows smoothly for Tm and there are jumps from the C-band to the L-band for […]
102
NUSOD2021_D08
D08–Numerical simulation on the effect of the working temperature on the response sensitivity for GaAs-based blocked impurity band (BIB) terahertz detectors

D08–Numerical simulation on the effect of the working temperature on the response sensitivity for GaAs-based blocked impurity band (BIB) terahertz detectors

Wang X., Ma W., Wang B., Zhang C., Chen Yulu, Zhang H.

Working temperature is a critical parameter to evaluate the performance of Gallium Arsenide (GaAs) blocked impurity-band (BIB) terahertz detector. An optimal devicetemperature can ensure the best response sensitivity. Therefore, we analyze the effect of device temperature on the response sensitivity characteristics of GaAs-based BIB detector by numerical simulation. The simulated result shows that the optimal […]
75
2
NUSOD2021_IS04

IS04–Flexible and Highly Scalable LiDAR for an FMCW LiDAR PIC based on Grating Couplers

Voskerchyan V., Tian Y., Soares F. M., Diaz-Otero F.

In this paper three types of Silicon Photonics OPA architectures are proposed and investigated. Edge-fire optical phased array, that simplifies the design of the OPA. Second architecture is OPA with grating coupler antennas. Maximum steering angle for edge-fire OPA is ±44◦, FWHM is 0.10986◦. For GC OPA steering angle is ±20◦ and FWHM=1.003116◦. Third architecture […]
133
5
NUSOD2021_NM03

NM03–Tight binding simulations of tetragonal MAPbI3 domains within orthorhombic phase

Di Vito A., Pecchia A., Auf der Maur M., Di Carlo A.

Very recent photoluminescence studies, investigating the tetragonal-to-orthorhombic phase transition of MAPbI3, demonstrated the presence of residual tetragonal phase far below the transition temperature, yielding spectral signatures from quantum confined tetragonal domains. We present a theoretical model of the coexistence of tetragonal and orthorhombic MAPbI3, based on tight binding simulations. The tight binding parameters are derived […]
135
9
NUSOD2021_LED06
LED06–Modeling of secondary optics LED aerodrome fires

LED06–Modeling of secondary optics LED aerodrome fires

Kvach Y.

The development of LED technology has allowed the Ukrainian Association of Lighting Enterprises of Vatra Corporation to develop the construction of LED equipment for the airfield light signal systems. Features of fire design, angles of installation of fires, difficulties in observing LED aerodrome fires – these factors influence the decision making when establishing visual contact. […]
42
NUSOD2021_MM05

MM05–Dynamic Response Prediction of Bi-State Emission of Quantum Dot Lasers Based on Extreme Learning Machine

Santos W.F.S., Simas Filho E. F., Thé G. A. P.

Dual-state emission is an phenomenon which takes place in Quantum Dot Lasers at different temperature and operating conditions. In this study, we investigate that issue from a nonlinear regression model based on Extreme Learning Machine, which revealed to be able to predict the spectrally resolved transient response of InAs/InGaAs quantum dot laser with error performance […]
78
4
NUSOD2021_N07
N07–Short Pulses from QD Laser Excited State

N07–Short Pulses from QD Laser Excited State

Dogru N., Duranoglu Tunc S. H., Al-Dabbagh A. M.

 For the first time gain-switched short pulse generation with a width of 25-40 ps from excited state is demonstrated applying an external optical Gaussian beam to the excited state of InAs-InP-(113)B quantum dot laser.
88
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NUSOD2021_P02
P02–Quantum Information Interface on a Photonic Crystal Chip

P02–Quantum Information Interface on a Photonic Crystal Chip

Mertin P., Witzigmann B.

Quantum systems for information processing rely on the distribution of quantum information in a network. Lanthanide complexes coupled to an optical cavity can act as an interface between a stationary and a flying QuBit. Here we show that in such a system the stationary quantum information can be mapped onto a photon, paving the way […]
137
7
NUSOD2021_LD14pd
LD14pd–Optimization of Double-Circular-Hole Photonic-Crystal Surface-Emitting Lasers

LD14pd–Optimization of Double-Circular-Hole Photonic-Crystal Surface-Emitting Lasers

Kuo C.-Y., Yang Z.-X., Lin G.

Photonic-crystal surface-emitting lasers (PCSELs) with double circular holes in the unit cell are optimized in terms of slope efficiency and single-mode stability. For PC-SELs with double-hole shift of one-fourth and one-third lattice constant, the area ratios of two holes are optimized separately and fall in completely different range; moreover, their threshold gain discrimination values are […]
58
NUSOD2021_D09
D09–Near Infra-red Photosensor using Optically Gated D-MOS Vertical TFET

D09–Near Infra-red Photosensor using Optically Gated D-MOS Vertical TFET

Vandana Devi W., Bhowmick B., Pukhrambam P. D.

This article reports a highly sensitive and low power photosensor using dual MOSCAP Vertical TFET for near infrared light detection in the wavelength range 0.7µm to 1µm. The optical voltage (VOP) developed because of the photogeneration occurring within the gate region enhances the gate control over the channel and produces higher drain current. The sensitivity […]
115
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