D06–Photoresponse uniformity in planar InP/InGaAs avalanche photodiodes

 Numerical simulation of the electric field distribution and photocurrent response of a planar InP/InGaAs avalanche photodiode is presented as a function of varying multiplication width. The Zn dopant diffusion front is obtained by numerically simulating the diffusion process. The simulation results indicate that while a local peak value of the electric field is observed near the device edge, it is not associated with a significant increase in the photocurrent response.

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