LD04–A multiscale approach for BTJ-VCSEL electro-optical analysis

This paper presents a theoretical comparison of the electro-optical characteristics of 850 nm GaAs/AlGaAs pinand BTJ-based VCSELs. The calculations are based on a drift-diffusion model coupled with a NEGF formalism, able to model accurately the tunneling across the TJ. The resulting LIV characteristics demonstrate promising improvements, at both 25 and 80 ◦C, enabled by TJ confinement scheme.