Detectors9 Videos

D09–Near Infra-red Photosensor using Optically Gated D-MOS Vertical TFET

Vandana Devi W., Bhowmick B., Pukhrambam P. D.

This article reports a highly sensitive and low power photosensor using dual MOSCAP Vertical TFET for near infrared light detection in the wavelength range 0.7µm to 1µm. The optical voltage (VOP) developed because of the photogeneration occurring within the gate region enhances the gate control over the channel and produces higher drain current. The sensitivity […]

D08–Numerical simulation on the effect of the working temperature on the response sensitivity for GaAs-based blocked impurity band (BIB) terahertz detectors

Wang X., Ma W., Wang B., Zhang C., Chen Yulu, Zhang H.

Working temperature is a critical parameter to evaluate the performance of Gallium Arsenide (GaAs) blocked impurity-band (BIB) terahertz detector. An optimal devicetemperature can ensure the best response sensitivity. Therefore, we analyze the effect of device temperature on the response sensitivity characteristics of GaAs-based BIB detector by numerical simulation. The simulated result shows that the optimal […]

D07–The absorption enhancement effect of metal gratings integrated Silicon-based Blocked-Impurity-Band (BIB) terahertz detector

Chen Yulu, Tong W., Wang B., Wang L., Cui H., Wang X.

High-sensitivity Terahertz (THz) detection technology is widely researched for its potential applications in astronomical observation, human security check, weak signal biomacromolecule detection, etc. In this work, a novel THz detector based on metal gratings/Si-BIB hybrid structure is theoretically simulated and successfully fabricated. From FDTD simulation results, the optical field is localized in the absorbing-layer region […]

D06–Photoresponse uniformity in planar InP/InGaAs avalanche photodiodes

Walker A. W., Pitts O. J.

 Numerical simulation of the electric field distribution and photocurrent response of a planar InP/InGaAs avalanche photodiode is presented as a function of varying multiplication width. The Zn dopant diffusion front is obtained by numerically simulating the diffusion process. The simulation results indicate that while a local peak value of the electric field is observed near […]

D05–Evaluation of material profiles for III-V nanowire photodetectors

Martinez-Olivier C., Moselund K. E., Georgiev V. P.

In this paper we report the simulation-based design of experiment (DoE) study for three different types of III-V based pin photodetectors operating at various wavelengths. Our DoE work shows that the optimal configuration for each device is strongly determined by the wavelength at which we are aiming to operate the photodetector and that a trade-off […]

D04–Ge-on-Si waveguide photodetectors: multiphysics modeling and experimental validation

Alasio M. G. C., Goano M., Tibaldi A., Bertazzi F., Namnabat S., Adams D., Gothoskar P., Forghieri F., Ghione G., Vallone M.

This work compares a multiphysics modeling approach with experimental measurements of two Ge-on-Si butt-coupled waveguide photodetectors. The coupled three dimensional electromagnetic and electrical simulation of the frequency response shows promising agreement with the measurements at 1310 nm, and provides detailed information about significant microscopic quantities, such as the spatial distribution of the optical generation rate.

D03–Plasmonic nanorods for enhanced absorption in mid-wavelength infrared detectors

Vallone M., Goano M., Tibaldi A., Hanna S., Eich D., Wegmann A., Figgemeier H., Ghione G., Bertazzi F.

The absorption properties of HgCdTe based infrared detectors can be greatly increased in the mid-infrared band, by incorporating nanostructured plasmonic arrays on the illuminated detector face. The array periodicity, combined with the excitation of surface plasmon-polariton stationary modes, enhances the absorption efficiency by a substantial amount, allowing to reduce in turn the HgCdTe absorption thickness. 

D01–Probability Theory of Single-Carrier Avalanche in HgCdTe APDs as a Stochastic Process

Xie R., Hu W.

Recent researches have proven that HgCdTe is a good material to acquire both high multiplication and low excess noise factor at the same time in avalanche photodiodes (APDs). As a pseudo-binary narrow bandgap semiconductor material, HgCdTe exhibits high conduction band nonparabolicity as well as strong alloy scattering, especially for hot electrons, which changes the dynamics […]