Marquardt O.

Weierstrass Institute (WIAS), Mohrenstr. 39, 10117 Berlin, Germany


MM01–Connecting atomistic and continuum models for (In,Ga)N quantum wells: From tight-binding energy landscapes to electronic structure and carrier transport

Schulz S., O’Donovan M., Chaudhuri D., Patra S. K., Farrell P., Marquardt O., Streckenbach T., Koprucki T.

We present a multi-scale framework for calculating electronic and transport properties of nitride-based devices. Here, an atomistic tight-binding model is connected with continuum based electronic structure and transport models. In a first step, the electronic structure of (In,Ga)N quantum wells is analyzed and compared between atomistic and continuum-based approaches, showing that even though the two […]

N02–Wave-function engineering in (In,Ga)As/(In,Al)As core/shell nanowires

Marquardt O., Geelhaar L., Brandt O.

 We study the electronic properties of In0.53Ga0.47As/InxAl1–xAs core/shell nanowires for light emission in the telecommunication range. In particular, we systematically investigate the influence of the In content x of the InxAl1–xAs shell and the diameter d of the In0.53Ga0.47As core on strain distribution, transition energies, and the character of the hole wave function. We show […]