N02–Wave-function engineering in (In,Ga)As/(In,Al)As core/shell nanowires
We study the electronic properties of In0.53Ga0.47As/InxAl1–xAs core/shell nanowires for light emission in the telecommunication range. In particular, we systematically investigate the influence of the In content x of the InxAl1–xAs shell and the diameter d of the In0.53Ga0.47As core on strain distribution, transition energies, and the character of the hole wave function. We show that the character of the hole state, and thus the polarization of the light emitted by such core/shell nanowires, can be easily tuned via these two experimentally accessible parameters.
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