We study the electronic properties of In0.53Ga0.47As/InxAl1–xAs core/shell nanowires for light emission in the telecommunication range. In particular, we systematically investigate the influence of the In content x of the InxAl1–xAs shell and the diameter d of the In0.53Ga0.47As core on strain distribution, transition energies, and the character of the hole wave function. We show […]