Farrell P.

Weierstrass Institute (WIAS), Mohrenstr. 39, 10117 Berlin, Germany


MM01–Connecting atomistic and continuum models for (In,Ga)N quantum wells: From tight-binding energy landscapes to electronic structure and carrier transport

Schulz S., O’Donovan M., Chaudhuri D., Patra S. K., Farrell P., Marquardt O., Streckenbach T., Koprucki T.

We present a multi-scale framework for calculating electronic and transport properties of nitride-based devices. Here, an atomistic tight-binding model is connected with continuum based electronic structure and transport models. In a first step, the electronic structure of (In,Ga)N quantum wells is analyzed and compared between atomistic and continuum-based approaches, showing that even though the two […]