NM08pd–Brillouin Gain Coefficients of Magnetoactive Doped III-V Semiconductors: Hot Carrier Effects

Hot carrier effects (HCEs) of an intense pump wave on (steady-state and transient) Brillouin gain coefficients of magnetoactive doped III-V semiconductors are investigated. Numerical analysis is made for n-InSb crystal – CO2 laser system.

This content is locked

Login To Unlock The Content!