Tang M.

Department of Electronic and Electrical Engineering University College London London, United Kingdom


N05–Modeling the effects of p-modulation doping in InAs quantum dot devices

Maglio B., Jarvis L., Tang M., Liu H., Smowton P. M.

A modeling routine has been developed to quantify the effects of p-modulation doping in the waveguide core region of InAs quantum dot (QD) devices. Utilizing one dimensional approximations, simulated outputs of reverse and forward devices are simulated providing insight into absorption and gain properties.