Moselund K. E.

IBM Research Europe, Säumerstrasse 4, 8803 Rüschlikon, Switzerland


D05–Evaluation of material profiles for III-V nanowire photodetectors

Martinez-Olivier C., Moselund K. E., Georgiev V. P.

In this paper we report the simulation-based design of experiment (DoE) study for three different types of III-V based pin photodetectors operating at various wavelengths. Our DoE work shows that the optimal configuration for each device is strongly determined by the wavelength at which we are aiming to operate the photodetector and that a trade-off […]

LD03–Thermal and optical simulation of InP on Si nanocavity lasers

Wen P., Tiwari P., Moselund K. E., Gotsmann B.

Accurate prediction of thermal effects is important for scaled photonic devices as excessive heating may lead to device failure. This paper addresses numerical modeling of thermal properties of InP nanocavity lasers on Si combined with optical simulations in Lumerical and lasing threshold measurements. Different geometries with diameters ranging from 200 nm to 2 µm are […]