Ghosh K.

Department of Electrical Engineering, IIT Jammu, Jammu, J&K-181221, India


LED05–Engineering the Active Region to Enhance the IQE by ~8% in AlGaN/GaN based UVC LED

Acharya J., Venkateshh S., Ghosh K.

To increase the internal quantum efficiency (IQE) of AlGaN/GaN based multi quantum-well (MQW) UV-C LED, the aluminium composition of barriers and wells in the active region has been engineered. Increase in electron-hole overlap and hence the radiative recombination rate in the final engineered structure has enabled to enhance the IQE by 8%.