N04–Bismuth-containing GaAs core-shell nanowires

This work theoretically investigates the electronic and optical properties of GaBi_xAs_1–x/GaAs core–shell and GaAs/GaBi_xAs_1–x/GaAs multi-core–shell nanowires. Our results show a large tuning of absorption wavelength (0.9 µ to 1.6 µ) by varying Bi composition and/or nanowire diameters. The computed polarisation dependent optical spectra indicate the possibility to incorporate such nanowires in photonic devices desiring isotropic polarisation response . Overall our work provides a systematic and detailed understanding of bismuth containing GaAs nanowire optoelectronic properties which could offer new possibilities for future green photonic technologies.